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NP-SBMC Series 80A, Ultra Low Capacitance TSPD
The NP-SBMC series of Low Capacitance Thyristor Surge Protection Devices (TSPD) protect sensitive electronic equipment from transient overvoltage conditions. Due to their ultra low off-state capacitance (Co), they offer minimal signal distortion for high speed equipment such as ADSL2+, VDSL and T1/E1 circuits. The low nominal offstate capacitance translates into the extremely low differential capacitance offering superb linearity with applied voltage or frequency. These reliable silicon devices are also a suitable alternative to GDT protectors. The NP-SBMC Series helps designers to comply with the various regulatory standards and recommendations including: GR-1089-CORE, IEC 61000-4-5, ITU K.20/K.21/K.45, IEC 60950, TIA-968-A, FCC Part 68, EN 60950, UL 1950.
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ULTRA LOW CAPACITANCE BIDIRECTIONAL SURFACE MOUNT THYRISTOR 80A, 10x1000ms SURGE
* * * * * *
Ultra Low - Micro Capacitance Low Leakage (Transparent) High Surge Current Capabilities Precise Turn on Voltages Low Voltage Overshoot These are Pb-Free Devices
T
R
Typical Applications
* xDSL Central Office and Customer Premise * T1/E1 * Other Broadband High Speed Data Transmission Equipment
ELECTRICAL CHARACTERISTICS
VDRM Device NP0640SBMCT3G NP0720SBMCT3G NP0900SBMCT3G NP1100SBMCT3G NP1300SBMCT3G NP1500SBMCT3G NP1800SBMCT3G NP2100SBMCT3G NP2300SBMCT3G NP2600SBMCT3G NP3100SBMCT3G NP3500SBMCT3G V $58 $65 $75 $90 $120 $140 $170 $180 $190 $220 $275 $320 V(BO) V $77 $88 $98 $130 $160 $180 $220 $240 $260 $300 $350 $400 CO, 2 V, 1 MHz pF (Max) 21 21 21 21 21 21 21 21 21 21 21 21 CO, 50 V, 1 MHz pF (Max) 10 10 10 10 10 10 10 10 10 10 10 10 A Y WW xxx
SMB JEDEC DO-214AA CASE 403C
MARKING DIAGRAM
AYWW xxxBMG G = Assembly Location = Year = Work Week = Specific Device Code (NPxxx0SBMC) G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device NPxxx0SBMCT3G Package SMB (Pb-Free) Shipping 2500 /Tape & Reel
G in part number indicates RoHS compliance Other protection voltages are available upon request Symmetrical Protection - Values the same in both negative and positive excursions (See V-I Curve on page 3)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
September, 2008 - Rev. 1
1
Publication Order Number: NP3100SBMC/D
NP-SBMC Series
SURGE RATINGS
IPPS A Waveform (ms) Value 2x10 250 8x20 250 10x160 150 10x560 100 10x360 125 10x1000 80 5x310 100 ITSM A 0.1 s 60 Hz 30 di/dt A/ms 500
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol VDRM Rating Repetitive peak off-state voltage: Rated maximum (peak) continuous voltage that may be applied in the off-state conditions including all dc and repetitive alternating voltage components. NP0640SBMCT3G NP0720SBMCT3G NP0900SBMCT3G NP1100SBMCT3G NP1300SBMCT3G NP1500SBMCT3G NP1800SBMCT3G NP2100SBMCT3G NP2300SBMCT3G NP2600SBMCT3G NP3100SBMCT3G NP3500SBMCT3G IPPS Nonrepetitive peak pulse current: Rated maximum value of peak impulse pulse current that may be applied. 2x10 ms, GR-1089-CORE 8x20 ms, IEC-61000-4-5 10x160 ms, TIA-968-A 10x560 ms, TIA-968-A 10x360 ms, GR-1089-CORE 10x1000 ms, GR-1089-CORE 5x310 ms, ITU-K.20/K.21/K.45 ITSM Nonrepetitive peak on-state current: Rated maximum (peak) value of ac power frequency on-state surge current which may be applied for a specified time or number of ac cycles. 0.1s, 50/60 Hz, full sine wave Value $58 $65 $75 $90 $120 $140 $170 $180 $190 $220 $275 $320 250 250 150 100 125 80 100 30 A A Unit V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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NP-SBMC Series
ELECTRICAL CHARACTERISTICS TABLE (TA = 25C unless otherwise noted)
Symbol V(BO) Rating Breakover voltage: The maximum voltage across the device in or at the breakdown region. VDC = 1000 V, dv/dt = 100 V/ms NP0640SBMCT3G NP0720SBMCT3G NP0900SBMCT3G NP1100SBMCT3G NP1300SBMCT3G NP1500SBMCT3G NP1800SBMCT3G NP2100SBMCT3G NP2300SBMCT3G NP2600SBMCT3G NP3100SBMCT3G NP3500SBMCT3G I(BO) IH IDRM VT dv/dt Breakover Current: The instantaneous current flowing at the breakover voltage. Holding Current: The minimum current required to maintain the device in the on-state. Off-state Current: The dc value of current that results from the application of the off-state voltage VD = 50 V VD = VDRM 150 2 5 4 5 V kV/ms Min Typ Max $77 $88 $98 $130 $160 $180 $220 $240 $260 $300 $350 $400 800 mA mA mA Unit V
On-state Voltage: The voltage across the device in the on-state condition. IT = 2.2 A (pk), PW = 300 ms, DC = 2% Critical rate of rise of off-state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off-state to the on-state. Linear Ramp between 0.1 VDRM and 0.9 VDRM Critical rate of rise of on-state current: rated value of the rate of rise of current which the device can withstand without damage. Off-state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = -2 Vdc NP0640SBMCT3G NP0720SBMCT3G NP0900SBMCT3G NP1100SBMCT3G NP1300SBMCT3G NP1500SBMCT3G NP1800SBMCT3G NP2100SBMCT3G NP2300SBMCT3G NP3100SBMCT3G NP3500SBMCT3G
di/dt CO
500 21 21 21 21 21 21 21 21 21 21 21
A/ms pF
THERMAL CHARACTERISTICS
Symbol TSTG TJ R0JA Storage Temperature Range Junction Temperature Thermal Resistance: Junction-to-Ambient Per EIA/JESD51-3, PCB = FR4 3"x4.5"x0.06" Fan out in a 3x3 inch pattern, 2 oz copper track. Rating Value -65 to +150 -40 to +150 90 Unit C C C/W
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NP-SBMC Series
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol VDRM V(BO) IDRM I(BO) IH VT IT ITSM IPPS VD ID Parameter Repetitive Peak Off-state Voltage Breakover Voltage Off-state Current Breakover Current Holding Current On-state Voltage On-state Current Nonrepetitive Peak On-state Current Nonrepetitive Peak Impulse Current Off-state Voltage Off-state Current -I VD -Voltage IPPS ITSM IT IH I(BO) IDRM +I On-State Region VT Off-State Region ID +Voltage V(BO) VDRM
Figure 1. Voltage Current Characteristics of TSPD
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NP-SBMC Series
Ipp - PEAK PULSE CURRENT - %Ipp
100
PEAK ON-STATE CURRENT
100
Peak Value
tr = rise time to peak value tf = decay time to half value
10
50
Half Value
1 0.1
0
1
Figure 2. Nonrepetitive On-State Current vs. Time (ITSM) Detailed Operating Description
10 100 CURRENT DURATION (s)
1000
0 tr
tf TIME (ms)
Figure 3. Nonrepetitive On-State Impulse vs. Waveform (IPPS)
The TSPD or Thyristor Surge Protection Device are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. The TSPD protects by switching to a low on state voltage when the specified protection voltage is exceeded. This is known as a "crowbar" effect. When an overvoltage occurs, the crowbar device changes from a high-impedance to a low-impedance state. This low-impedance state then offers a path to ground, shunting unwanted surges away from the sensitive circuits. This crowbar action defines the TSPD's two states of functionality: Open Circuit and Short Circuit. Open Circuit - The TSPD must remain transparent during normal circuit operation. The device looks like an open across the two wire line. Short Circuit - When a transient surge fault exceeds the TSPD protection voltage threshold, the devices switches on, and shorts the transient to ground, safely protecting the circuit.
+ I(OP) + Protected Equipment -
*TSPD looks like an open *Circuit operates normally
The electrical characteristics of the TSPD help the user to define the protection threshold for the circuit. During the open circuit condition the device must remain transparent; this is defined by the IDRM. The IDRM should be as low as possible. The typical value is less than 5 mA. The circuit operating voltage and protection voltage must be understood and considered during circuit design. The V(BO) is the guaranteed maximum voltage that the protected circuit will see, this is also known as the protection voltage. The VDRM is the guaranteed maximum voltage that will keep the TSPD in its normal open circuit state. The TSPD V(BO) is typically a 20-30% higher than the VDRM. Based on these characteristics it is critical to choose devices which have a VDRM higher than the normal circuit operating voltage, and a V(BO) which is less than the failure threshold of the protected equipment circuit. A low on-state voltage Vt allows the TSPD to conduct large amounts of surge current (500 A) in a small package size. Once a transient surge has passed and the operating voltage and currents have dropped to their normal level the TSPD changes back to its open circuit state.
V(OP) TSPD -
Normal Circuit Operation
I + (Fault) V(Fault) TSPD -
+ I(Fault) Protected Equipment -
Operation during a Fault
*Fault voltage greater than Vbo occurs *TSPD shorts fault to ground *After short duration events the O/V switches back to an open condition *Worst case (Fail/Safe) *O/V permanent short *Equipment protected
Figure 4. Normal and Fault Conditions
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NP-SBMC Series
Transient Surge
DEVICE SELECTION
When selecting a TSPD use the following key selection parameters.
Off-State Voltage VDRM
Equipment Failure Threshold TSPD Protection Voltage Upper Limit Normal System Operating Voltage
TSPD Transparent (open) TSPD Protection (short) TSPD Transparent (open)
Choose a TSPD that has an Off-State Voltage greater than the normal system operating voltage. The protector should not operate under these conditions: Example:
Vbat = 48 Vmax Vring = 150 Vrms = 150*1.414 = 212 V peak
Volts
Time
VDRM should be greater than the peak value of these two components:
VDRM > 212 + 48 = 260 VDRM Breakover Voltage V(BO)
Figure 5. Protection During a Transient Surge
TSPD's are useful in helping designers meet safety and regulatory standards in Telecom equipment including GR-1089-CORE, ITU-K.20, ITU-K.21, ITU-K.45, FCC Part 68, UL1950, and EN 60950. ON Semiconductor offers a full range of these products in the NP series product line.
Verify that the TSPD Breakover Voltage is a value less than the peak voltage rating of the circuit it is protecting. Example: Relay breakdown voltage, SLIC maximum voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the anticipated surge currents in testing. In some cases the 100 A "C" series device may be needed when little or no series resistance is used. When a series current limiter is used in the circuit a lower current level of "A" or "B" may be used. To determine the peak current divide the maximum surge current by the series resistance.
Hold Current (IH)
The Hold Current must be greater than the maximum system generated current. If it is not then the TSPD will remain in a shorted condition, even after a transient event has passed.
TYPICAL APPLICATION
Tip NP3100SBMC Voice NP3100SBMC Ring
DSL
Figure 6. ADSL
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NP-SBMC Series
PACKAGE DIMENSIONS
SMB CASE 403C-01 ISSUE A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
S A
D
B
C
INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220
MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59
K
P
J
H
SOLDERING FOOTPRINT*
2.261 0.089
2.743 0.108
2.159 0.085
SCALE 8:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NP3100SBMC/D

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